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1 MRF21085 MRF21085r3 MRF21085sr3 MRF21085lsr3 motorola rf device data the rf mosfet line nCchannel enhancementCmode lateral mosfets designed for wCcdma base station applications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n C p c s / c e l l u l a r r a d i o a n d w l l applications. ? typical 2Ccarrier wCcdma performance for v dd = 28 volts, i dq = 1000 ma, f1 = 2135 mhz, f2 = 2145 mhz, channel bandwidth = 3.84 mhz, adjacent channels measured over 3.84 mhz bw @ f1 C 5 mhz and f2 +5 mhz, distortion products measured over a 3.84 mhz bw @ f1 C10 mhz and f2 +10 mhz, peak/avg. = 8.3 db @ 0.01% probability on ccdf. output power 19 watts avg. power gain 13.6 db efficiency 23% im3 C37.5 dbc acpr C41 dbc ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 28 vdc, 2170 mhz, 90 watts cw output power ? excellent thermal stability ? characterized with series equivalent largeCsignal impedance parameters ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. ? available with low gold plating thickness on leads. l suffix indicates 40 ? nominal. maximum ratings rating symbol value unit drainCsource voltage v dss 65 vdc gateCsource voltage v gs C0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 224 1.28 watts w/ c storage temperature range t stg C65 to +200 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.78 c/w note C caution C mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF21085/d semiconductor technical data 2170 mhz, 90 w, 28 v lateral nCchannel rf power mosfets case 465C06, style 1 niC780 MRF21085 case 465aC06, style 1 niC780s MRF21085sr3, MRF21085lsr3 ? motorola, inc. 2002 rev 4
MRF21085 MRF21085r3 MRF21085sr3 MRF21085lsr3 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drainCsource breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 vdc zero gate voltage drain current (v ds = 28 vdc, v gs = 0 vdc) i dss 10 adc gateCsource leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss 1 adc on characteristics (dc) gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 1000 madc) v gs(q) 3 3.9 5 vdc drainCsource onCvoltage (v gs = 10 vdc, i d = 2 adc) v ds(on) 0.18 0.21 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs 6 s dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc, v gs = 0, f = 1.0 mhz) c rss 3.6 pf functional tests (in motorola test fixture, 50 ohm system) 2Ccarrier wCcdma, 3.84 mhz channel bandwidth carriers, acpr and im3 measured in 3.84 mhz bandwidth. peak/avg. = 8.3 db @ 0.01% probability on ccdf. commonCsource amplifier power gain (v dd = 28 vdc, p out = 19 w avg., i dq = 1000 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 12 13.6 db drain efficiency (v dd = 28 vdc, p out = 19 w avg., i dq = 1000 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 20 23 % third order intermodulation distortion (v dd = 28 vdc, p out = 19 w avg., i dq = 1000 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; im3 measured over 3.84 mhz bw at f1 C10 mhz and f2 +10 mhz referenced to carrier channel power.) im3 C37.5 C35 dbc adjacent channel power ratio (v dd = 28 vdc, p out = 19 w avg., i dq = 1000 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz; acpr measured over 3.84 mhz at f1 C5 mhz and f2 +5 mhz.) acpr C41 C38 dbc input return loss (v dd = 28 vdc, p out = 19 w avg., i dq = 1000 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) irl C12 C9 db output mismatch stress (v dd = 28 vdc, p out = 90 w cw, i dq = 1000 ma, f = 2170 mhz vswr = 5:1, all phase angles at frequency of tests) no degradation in output power before and after test (1) part is internally matched both on input and output. (continued)
3 MRF21085 MRF21085r3 MRF21085sr3 MRF21085lsr3 motorola rf device data electrical characteristics continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in motorola test fixture, 50 ohm system) (continued) twoCtone commonCsource amplifier power gain (v dd = 28 vdc, p out = 90 w pep, i dq = 1000 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) g ps 13.6 db twoCtone drain efficiency (v dd = 28 vdc, p out = 90 w pep, i dq = 1000 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) 36 % twoCtone intermodulation distortion (v dd = 28 vdc, p out = 90 w pep, i dq = 1000 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) imd C31 dbc input return loss (v dd = 28 vdc, p out = 90 w pep, i dq = 1000 ma, f1 = 2110 mhz, f2 = 2120 mhz and f1 = 2160 mhz, f2 = 2170 mhz) irl C12 db p out , 1 db compression point (v dd = 28 vdc, i dq = 1000 ma, f = 2170 mhz) p1db 100 w
MRF21085 MRF21085r3 MRF21085sr3 MRF21085lsr3 4 motorola rf device data figure 1. MRF21085 test circuit schematic board 0.030 glass teflon ? , keene gxC0300C55C22, r = 2.55 pcb etched circuit boards MRF21085 rev. 3, cmr z1 0.750 x 0.084 microstrip z2 1.015 x 0.084 microstrip z3 0.480 x 0.800 microstrip z4 0.750 x 0.050 microstrip z5 0.610 x 0.800 microstrip z6 0.885 x 0.084 microstrip z7 0.720 x 0.084 microstrip z8 0.800 x 0.070 microstrip table 1. MRF21085 test circuit component designations and values designators description b1 short ferrite bead, fair rite, #2743019447 c1, c6 43 pf chip capacitors, atc #100b430jca500x c2 10 pf chip capacitor, atc #100b100jca500x c3, c9 1000 pf chip capacitors, atc #100b102jca500x c4, c10 0.1 f chip capacitors, kemet #cdr33bx104akws c5 1.0 f tantalum chip capacitor, kemet #t491c105m050 c7 2.7 pf chip capacitor, atc #100b2r7jca500x c8 10 f tantalum chip capacitor, kemet #t495x106k035as4394 c11, c12 22 f tantalum chip capacitors, kemet #t491x226k035as4394 l1 1 turn, #20 awg, 0.100 id, motorola n1, n2 type n flange mounts, omni spectra #3052C1648C10 r1 1.0 k ? , 1/8 w chip resistor r2 180 k ? , 1/8 w chip resistor r3, r4 10 ? , 1/8 w chip resistors
5 MRF21085 MRF21085r3 MRF21085sr3 MRF21085lsr3 motorola rf device data figure 2. MRF21085 test circuit component layout MRF21085 cut out rev 3
MRF21085 MRF21085r3 MRF21085sr3 MRF21085lsr3 6 motorola rf device data typical characteristics figure 3. 2-carrier w-cdma acpr, im3, power gain and drain efficiency versus output power figure 4. intermodulation distortion products versus output power figure 5. third order intermodulation distortion versus output power figure 6. 2-carrier w-cdma broadband performance figure 7. cw performance figure 8. two-tone intermodulation distortion and drain efficiency versus drain supply
7 MRF21085 MRF21085r3 MRF21085sr3 MRF21085lsr3 motorola rf device data figure 9. two-tone power gain versus output power figure 10. two-tone broadband performance figure 11. intermodulation distortion products versus twoCtone spacing figure 12. 2-carrier w-cdma spectrum
MRF21085 MRF21085r3 MRF21085sr3 MRF21085lsr3 8 motorola rf device data figure 13. series equivalent input and output impedance f mhz z in ? z ol * ? 2110 2140 2170 1.10 + j3.71 1.12 + j3.40 1.11 + j3.57 1.23 + j2.10 1.26 + j1.92 1.25 + j1.76 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency. ?
9 MRF21085 MRF21085r3 MRF21085sr3 MRF21085lsr3 motorola rf device data notes
MRF21085 MRF21085r3 MRF21085sr3 MRF21085lsr3 10 motorola rf device data notes
11 MRF21085 MRF21085r3 MRF21085sr3 MRF21085lsr3 motorola rf device data package dimensions case 465C06 issue f niC780 MRF21085

d g k c e h s f q 2x b b (flange)

aa (flange) t n (lid) m (insulator) (insulator) r (lid) case 465aC06 issue f niC780s MRF21085sr3, MRF21085lsr3

d k c e h f u (flange) 4x z (lid) 4x
b b (flange) 2x

a a (flange) t n (lid) m (insulator) r (lid) s (insulator)
MRF21085 MRF21085r3 MRF21085sr3 MRF21085lsr3 12 motorola rf device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. typical parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operatin g parameters, including t ypicals must be validated for each customer application by customers technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola, inc. motorola, inc. is an equal opportunity/a ffirmative action employer. motorola and the logo are registered in the us patent & t rademark office. all other product or service names are the property of t heir respective owners. motorola, inc. 2002. how to reach us: usa/europe/locations not listed : motorola literature distribution; p.o. box 5405, denver, colorado 80217. 1C303C675C2140 or 1C800C441C2447 japan : motorola japan ltd.; sps, technical information center, 3C20C1, minamiCaz abu. minatoCku, tokyo 106C8573 japan. 8 1C3C3440C3569 asia/pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 da i king street, tai po industrial estate, tai po, n.t., hong ko ng. 852C26668334 technical information center: 1C800C521C6274 home page : http://www .motorola.com/semiconductors/ MRF21085/d ?

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